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Semiconductor device fabrication
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#	Item
291	Fast flexible electronics with strained silicon nanomembranes SUBJECT AREAS: ELECTRICAL AND ELECTRONIC ENGINEERING Add to Reading List Source URL: www.nature.com Language: English - Date: 2013-02-18 05:02:24 Silicon Semiconductor devices Semiconductor device fabrication Integrated circuits Alloys Silicon-germanium Strained silicon Strain engineering Transistor Chemistry Electronics Matter
292	WELCOME FROM THE MAYOR OF SAN DIEGO 2 WELCOME FROM ECTC GENERAL AND PROGRAM CHAIRS On behalf of the Program Committee and Executive Committee, it is our pleasure to welcome you to the 65th Electronic Add to Reading List Source URL: www.ectc.net Language: English - Date: 2015-05-12 23:46:05 Semiconductor device fabrication Three-dimensional integrated circuit
293	Add to Reading List Source URL: rmras.org Language: English - Date: 2015-05-26 17:27:22 Pharmacology Semiconductor device fabrication Chemical engineering Pharmaceutical industry Tablet Cleanroom Dietary supplement Mop Blender Technology Dosage forms Home
294	Microsoft Word - FABEC Training Seminar 2015 AGENDA DRAFT.doc Add to Reading List Source URL: www.fabec.eu Language: English Semiconductor device fabrication Semiconductor fabrication plant EC
295	I N S P I R E D I N N O V AT I O N u C F and CDF Series Infrared Add to Reading List Source URL: www.despatch.eu Language: English - Date: 2014-05-06 16:32:55 Wafer Technology Manufacturing Microtechnology Semiconductor device fabrication Electronics manufacturing Thermal profiling
296	Publications that quote the use of OAR atom sources Nitrides (AlN, GaN, InN) 1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films. W Hoke P Lemonias & D Weir. J Crystal Growth 111 Add to Reading List Source URL: www.oaresearch.co.uk Language: English - Date: 2015-04-23 17:42:57 Compound semiconductors Inorganic compounds Semiconductor device fabrication Gallium nitride Epitaxy Gallium arsenide Molecular beam epitaxy Metalorganic vapour phase epitaxy Superlattice Chemistry Thin film deposition Semiconductor growth
297	P I L K I N G T O N T E C H N O L O G Y D ATA S H E E T COATING TECHNOLOGY – PROCESSES Magnetron Sputtering The invention of “planar magnetrons” in 1971 allowed coatings to be sputtered in vacuum at much higher ra Add to Reading List Source URL: www.pilkington.com Language: English - Date: 2014-02-18 06:28:01 Coatings Plasma processing Manufacturing Technology Materials science Sputter deposition Physical vapor deposition Chemical vapor deposition Sputtering Thin film deposition Chemistry Semiconductor device fabrication
298	JOURNAL OF APPLIED PHYSICS 99, 093507 共2006兲 Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species Z. Q. Chena兲 Department of Physics, Wuhan University, Wuhan, Peo Add to Reading List Source URL: www.geocities.jp Language: English - Date: 2006-06-17 22:47:53 Semiconductor device fabrication Zinc oxide Annealing Chemistry Ion implantation Materials science
299	Photon Factory Activity Report 2005 #23Part BSurface and Interface 4C,6A,15C/2004G059 Residual Order in the Interfacial SiO2 Layer Add to Reading List Source URL: pfwww.kek.jp Language: English - Date: 2010-01-05 10:32:23 Electronic engineering Transistors High-k dielectric Gate dielectric Thermal oxidation Semiconductor device fabrication Silicon dioxide Polycrystalline silicon Negative bias temperature instability Chemistry Electromagnetism Electronics
300	phys. stat. sol. (c) 4, No. 10, 3646– DOIpsscIon species dependence of the implantation-induced defects in ZnO studied by a slow positron beam Z. Q. Chen∗1 , M. Maekawa2 , A. Kawasu Add to Reading List Source URL: www.geocities.jp Language: English - Date: 2007-11-11 12:22:08 Ion implantation Zinc oxide Annealing Center of Excellence in Nanotechnology at AIT Chemistry Semiconductor device fabrication Materials science

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